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| SMD Type Silicon Schottky Diodes BAS125 series Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 For low-loss, fast-recovery, meter protection,bias isolation and clamping applications Integrated diffused guard ring Low forward voltage 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Reverse voltage Forward current Surge forward current Total power dissipation Junction temperature Storage temperature range Junction-ambient Junction-soldering point Note 1. For detailed information see chapter Package Outlines. 2.Package mounted on alumina 15 mm 3.450 mW per package. 16.7 mm 0.7 mm. Symbol VR IF IFRM Ptot Tj Tstg Rth JA Rth JS Note 2 t Ts < 25 10 ms (Note 3) Conditions Values 25 100 500 250 150 -55 to +150 < 725 < 565 K/W K/W Unit V mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type Silicon Schottky Diodes BAS125 series Diodes Electrical Characteristics Ta = 25 Parameter Reverse voltage Symbol IR Conditions VR = 20 V VR = 25 V IF = 1 mA Forward voltage VF IF = 10 mA IF = 35 mA Diode capacitance Differential forward resistance CT RF VR = 0, f= 10 kHz IF = 5mA, f= 10 kHz 15 385 530 800 900 1.1 pF Min Typ Max 1 10 410 mV Unit A Marking Type Marking BAS125 13 BAS125-04 14 BAS125-05 15 BAS125-06 16 2 www.kexin.com.cn |
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